田康凯讲师
联系方式：kk_tian@gdut.edu.cn
通讯地址：广东工业大学大学城校区理学馆
所属团队：宽禁带半导体器件与集成团队
简介：
田康凯，1994年生，博士、讲师、青百B层次人才，博士毕业于河北工业大学；主要从事宽禁带半导体分立器件、芯片设计与TCAD仿真技术的研究。
研究方向：
宽禁带半导体器件、半导体器件物理、芯片设计与仿真技术
教育经历：
2016.9-2021.6河北工业大学，电子科学与技术，博士学位
2012.9-2016.6南通大学，集成电路设计与集成系统，学士学位；
工作经历：
2023.4-广东工业大学 集成电路学院 讲师
2021.6-2023.3天津赛米卡尔科技有限公司 技术总监
科研成果：
1.代表性学术论文：
[1]K. Tian, Q. Chen, C. Chu, M. Fang, L. Li, Y. Zhang, W. Bi, C. Chen, Z. –H. Zhang* and J. Dai*, “Investigations on AlGaN-based deep ultraviolet light-emitting diodes with Si-doped quantum barriers of different doping concentrations”, Phys. Status Solidi RRL 12(1), 1700346 (2017).
[2]K. Tian, C. Chu, H. Shao, J. Che, J. Kuo, M. Fang, Y. Zhang, W. Bi and Z. –H. Zhang*, “On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes”, Superlattice Microst. 122, 280-285 (2018).
[3]K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, Z. Zhang and T. Wei, “On the polarization self-screening effect in multiple quantum wells for nitride based near ultraviolet light emitting diodes”, Chin. Opt. Lett. Lett., 17 (12), 122301 (2019).
[4]K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, Q. Sun, Z. -H. Zhang*, T. Wei, Interplay between various active regions and the interband transition for AlGaN based deep ultraviolet light emitting diodes to enable a reduced TM polarized emission”, J. Appl. Phys. 126, 245701 (2019).
[5]C. Chu#, K. Tian#and Zhang Zi-Hui, Polarization self-screened multiple quantum wells for deep ultraviolet light-emitting diodes to enhance the optical power, IEEE Photonics Journal, 2021, 13(5): 8200305.
[6]Z. -H. Zhang*, K. Tian, C. Chu, M. Fang, Y. Zhang, W. Bi and H. –C. Kuo*, “Establishment of the relationship between the electron energy and the electron for AlGaN based ultraviolet light-emitting diodes”, Opt. Express 26(14), 17922 (2018).
[7]田康凯，楚春双，张紫辉,等。AlGaN基深紫外发光二极管空穴注入效率的提高途径[J].激光与光电子学进展，2018, 56(6) : 060001-1-060001-15. (CSCD、特邀综述、封面文章，优秀论文)
2.知识产权：
具有超晶格隧穿结的发光二极管外延结构及其制备方法，CN107230738A，田康凯，楚春双，方梦倩，李路平，张勇辉，张紫辉
