Liu Y., Peng Z. J, Lu Y. D., et al. A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs. AIP Advances. 2020, 10(9): 095224
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Liu Y., Peng Z. J, Lu Y. D., et al. A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs. AIP Advances. 2020, 10(9): 095224
点击次数：
是否译文：否