- Chen Y. Y., Ren Y., Liu Y.*, et al. Temperature Dependence of Conduction and Low Frequency Noise Characteristics in GaN Schottky Barrier Diodes. Modern Physics Letters B. 2020. Accept.
- Liu Y., Cai S. T., Xiong X. M., et al. Modeling of Contact Resistance Effect on Low Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors. Modern Physics Letters B. 2019. 33(17): 1950185.
- Zhong K., Liu Y.*, Cai S. T., et al. Temperature Dependence of Conduction and Low Frequency Noise Characteristics in Hydrogenated Amorphous Silicon Thin Film Transistors. Modern Physics Letters B. 2019, 33(2): 1950009.
- Liu Y., En Y. F., and Fang W. X. Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors. Modern Physics Letters B. 2017, 31(19-21): 1740020.
- Liu K., Liu Y.*, Liu Y. R., et al. Comparative Study of Mobility Extraction Methods in P-type Polycrystalline Silicon Thin Film Transistors. Modern Physics Letters B. 2017, 31(19-21): 1740004.
- Yue L, Yang S. H., Liu Y.*, et al. 170 keV Proton radiation effects on lowfrequency noise of bipolar junction transistors. Radiation Effects and Defects in Solids. 2017, 172(3-4): 313-322.
- Liu Y., Peng Z. J, Lu Y. D., et al. A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs. AIP Advances. 2020, 10(9): 095224.
- 刘远, 何红宇, 陈荣盛等. 氢化非晶硅薄膜晶体管的低频噪声特性. 物理学报. 2017, 66(23): 077101.
- 王静, 刘远*, 刘玉荣等. 铟锌氧化物薄膜晶体管局域态分布的提取方法. 物理学报. 2016, 65(12): 128501.
- 王凯, 刘远*, 陈海波等. 部分耗尽绝缘体上硅器件的低频噪声特性. 物理学报.2015, 64(10): 108503.